| 摘要 |
PURPOSE:To form a metal electrode having a minute structure, by making a semiconductor, which is grown on the side wall of an insulating film pattern, remain, and forming a resist pattern with the remaining semiconductor film as a mask. CONSTITUTION:A semiconductor film, e.g., a polysilicon film 6, is uniformly grown on a patterned insulating film, e.g., an SiO2 film 5, by using a CVD method. Then the polysilicon film 6 is etched by anisotropic plasma etching by Freon gas until the SiO2 film 5 is exposed. Thereafter, the SiO2 film 5 is removed by fluoric acid and the like. The polysilicon film 6 only on the side wall of the SiO2 film 5 is made to remain. A resist film 12 is applied so that a part of the remaining polysilicon film 6 is exposed. Thereafter, the polysilicon film 6 is removed by mixed acid and the like. Finally, a metal film 14 is evaporated on the entire surface and formed by sputtering and the like. The remaining resist film 12 is dissolved by an exfoliating agent such as an organic solvent and removed. The metal film 14 on the resist film 12 is removed. |
