| 摘要 |
PURPOSE:To enable the titled device to be produced by the same manufacturing line as that of general monolithic IC's by a method wherein a multilayer wiring substrate formed by the integral lamination of a plurality of wiring substrates is mounted on the active element mount of a lead frame. CONSTITUTION:The hybrid IC is manufactured by the process whereby individual ones are obtained e.g. by mounting a multilayer wiring substrate 5 onto the land part 2 of a lead frame 1; mounting a semiconductor pellet 6 onto the pellet area 12 of the uppermost wiring substrate 10 of the multilayer wiring substrate 5; bonding wires 7 to the surface electrode of the mounted semiconductor pellet 6, to bonding pads 13 of the uppermost wiring substrate 10, to bonding pads 14 in the periphery of the wiring substrate 10, and to inside tips of leads 3; and molding a resin-molding package 16; and finally cutting tie-bars 4 off the lead frame 1. |
