Semiconductor device with epitaxial structure and manufacturing method thereof

摘要

A semiconductor device includes a substrate, a gate structure, a spacer, and a plurality of hyper-sigma (Σ) shaped epitaxial stressors. The substrate includes a first semiconductor material, and the hyper-Σ shaped epitaxial stressors include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The hyper-Σ shaped epitaxial stressors respectively include a first portion, a second portion and a neck physically connecting the first portion and the second portion. The first portion includes a pair of first tips pointing toward the gate structure in a cross-sectional view. The second portion includes a pair of second tips pointing toward the gate structure in the cross-sectional view. The neck includes a first slanted surface in the first portion and a second slanted surface in the second portion.

主权项

1. A semiconductor device with epitaxial structure comprising:
a substrate comprising a first semiconductor material; a gate structure formed on the substrate; a spacer formed on sidewalls of the gate structure; and a plurality of hyper-sigma (Σ) shaped epitaxial stressors respectively formed in the substrate at two sides of the gate structure, the hyper-Σ shaped epitaxial stressors respectively comprising the first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material being larger than a lattice constant of the first semiconductor material, the hyper-Σ shaped epitaxial stressors further comprising:
a first portion comprising a pair of first tips pointed toward to the gate structure in a cross-sectional view;a second portion comprising a pair of second tips pointed toward the gate structure in the cross-sectional view; anda neck physically connecting the first portion and the second portion, the neck comprising a first slanted surface in the first portion and a second slanted surface in the second portion.