Methods of forming vertical transistor devices with self-aligned replacement gate structures

摘要

One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure, forming a layer of a bottom spacer material around the vertically oriented channel semiconductor structure and forming a sacrificial material layer above the layer of a bottom spacer material. In this example, the method further includes forming a sidewall spacer adjacent the vertically oriented channel semiconductor structure and above an upper surface of the sacrificial material layer, removing the sacrificial material layer so as to define a replacement gate cavity between a bottom surface of the sidewall spacer and the layer of a bottom spacer material, and forming a replacement gate structure in the replacement gate cavity.

主权项

1. A method of forming a replacement gate structure on a vertical transistor device, the method comprising:
forming a vertically oriented channel semiconductor structure; forming a layer of a bottom spacer material around said vertically oriented channel semiconductor structure; forming a sacrificial material layer above said layer of said bottom spacer material, said sacrificial material layer having an upper surface; forming a sidewall spacer adjacent said vertically oriented channel semiconductor structure and above said upper surface of said sacrificial material layer; after forming said sidewall spacer, removing said sacrificial material layer so as to define a replacement gate cavity between a bottom surface of said sidewall spacer and said layer of said bottom spacer material; and forming a replacement gate structure in said replacement gate cavity.