| 发明名称 |
Capacitor and method for fabricating the same |
| 摘要 |
A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a patterned first conductive layer on the material layer, forming a first dielectric layer on the patterned first conductive layer; forming a second conductive layer and a cap layer on the first dielectric layer; removing part of the cap layer to form a spacer on the second conductive layer; and using the spacer to remove part of the second conductive layer for forming a trench above the patterned first conductive layer and fin-shaped structures adjacent to the trench. |
| 申请公布号 |
US9530834(B1) |
申请公布日期 |
2016.12.27 |
| 申请号 |
US201514967344 |
申请日期 |
2015.12.13 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Zhou Zhibiao;Wu Shao-Hui;Ku Chi-Fa;Lin Chen-Bin |
| 分类号 |
H01L29/94;H01L49/02 |
主分类号 |
H01L29/94 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating capacitor, comprising:
providing a material layer; forming a patterned first conductive layer on the material layer, forming a first dielectric layer on the patterned first conductive layer; forming a second conductive layer and a cap layer on the first dielectric layer; removing part of the cap layer to form a spacer on the second conductive layer; and using the spacer to remove part of the second conductive layer for forming a trench above the patterned first conductive layer and fin-shaped structures adjacent to the trench. |
| 地址 |
Hsin-Chu TW |
