| 发明名称 | Distributing capacitance with gate driver for power switch | ||
| 摘要 | A semiconductor device includes a semiconductor die, a power switch, a gate driver, and decoupling capacitor. The power switch includes a power FET having a plurality of power FET segments formed in the semiconductor die. The gate driver has a plurality of gate driver segments formed in the semiconductor die, at least a portion of the gate driver segments being distributed among the power FET segments. The decoupling capacitor has a plurality of decoupling capacitor segments formed in the semiconductor die, the decoupling capacitor segments being distributed among the gate driver segments. | ||
| 申请公布号 | US9530765(B1) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201615135297 | 申请日期 | 2016.04.21 |
| 申请人 | Silanna Asia Pte Ltd | 发明人 | Moghe Yashodhan Vijay |
| 分类号 | H01L27/02;H03K17/687 | 主分类号 | H01L27/02 |
| 代理机构 | The Mueller Law Office, P.C. | 代理人 | The Mueller Law Office, P.C. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor die; a power switch including a power field effect transistor (FET) having a plurality of power FET segments formed in the semiconductor die; a gate driver having a plurality of gate driver segments formed in the semiconductor die, at least a portion of the gate driver segments being distributed among the power FET segments; and a decoupling capacitor having a plurality of decoupling capacitor segments formed in the semiconductor die, the decoupling capacitor segments being distributed among the gate driver segments. | ||
| 地址 | Singapore SG | ||