| 发明名称 |
Method of manufacturing GaAs single crystals |
| 摘要 |
A method of manufacturing GaAs single crystals in which gas in the vicinity of the surface of a substrate crystal is irradiated with light so that epitaxial growth of GaAs single crystals is effected. The gases supplied contain gallium chloride and arsenic, eg AsCl3.The irradiating light may have a wavelength of 200-300nm, eg 248nm.
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| 申请公布号 |
GB2163181(A) |
申请公布日期 |
1986.02.19 |
| 申请号 |
GB19850017875 |
申请日期 |
1985.07.16 |
| 申请人 |
* RESEARCH DEVELOPMENT CORPORATION OF JAPAN;JUNICHI * NISHIZAWA;YOSHIHIRO * KOKUBUN |
发明人 |
JUNICHI * NISHIZAWA;YOSHIHIRO * KOKUBUN |
| 分类号 |
H01L21/205;C30B25/10;H01L21/268;(IPC1-7):C23C16/08 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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