| 摘要 |
PURPOSE:To form a III-V family compound semiconductor layer having a weak P conductive type, by causing molecular beam epitaxial growth using as molecular beam sources ZnAs2 and/or ZSP2 as well as a principal molecular beam source ingredient. CONSTITUTION:On a semi-insulating GaAs substrate 1 which is mounted in a growth chamber, an undoped GaAs layer 2 is grown with As and Ga molecular beams. Thereafter, an undoped Ga0.7Al0.3As layer 3 is grown by opening the Al shutter and then N type Ga0.7Al0.3As layer 4 by opening the Si shutter. During the entire time or earlier predetermined time of the growth time during which the first undoped GaAs layer is grown, the growth is done while being irradiated with molecular beams from ZnAs2 so that a carrier concentration on an order of 10<14>cm<-3> having the P<-> conductive type can be positively attained. In the case where it is required that the layer containing As is made a weak P type, ZnAs2 is used, and in the case of the layer containing P, ZnP2 is used. |
