| 摘要 |
In an integrated circuit dual port static memory cell a first word line 37 is parallel to a second bit line 38, and both are perpendicular to a second word line 39 and first bit line 40. One bit line may be accessed through a p-channel transistor 10 while the other bit lines are accessed through n-channel transistors. This configuration permits the cell to use a single well, thus permitting higher density. The cell may be used in a discriminator. <IMAGE> |
