| 摘要 |
PURPOSE:To obtain an element which has excellent stability and reproducibility and improves the integration by using an Nb alloy made of amorphous or disordered crystal which containsone or more elements of Ge, Si, Al, Ga and Sn in a range of special atomic %. CONSTITUTION:An alloy which mainly contains Nb of amorphous or disordered crystal which contains one or more elements of Ge, Si, Al, Ga and Sn in a range of 20-70atom% is used. A resistance element of Na alloy of amorphous or disordered crystal which contains one or more of Ge, Si, Al, Ga and Sn by ion implanting to part of a superconductive strip wire made of Nb at lower than 400 deg.C of a substrate temperature is formed. With the content of Ge less than 20atom%, the temperature dependency of the resistivity is remarkable to become a superconductive and cannot be used as the resistance element. If exceeding more than 70atom%, the temperature dependency of the resistivity increases. |
