| 摘要 |
PURPOSE:To simultaneously form J-FETs of two different characteristics according to the depths of the second diffused layers by forming by phosphorus diffusing the second diffused layer in a plurality of first diffused layers on a substrate, forming an insulating layer thereon, then heat treating by removing an insulator layer on the partial second layer, and driving in the second diffused layer. CONSTITUTION:The first J-FET321 is formed by the first and second diffused layers 241, 271, and the second J-FET322 is formed by the first and second diffused layers 242, 272. Since the depths of the layers 271, 272 are different, the thicknesses d1, d2 of the channels of the first and second J-FETs 321, 322 are different. Even if the channel widths and lengths are the same, the channel conductance G (characteristics) when a depletion layer is 0 are generally different due to the difference thickness (d). Thus, the J-FETs 321, 322 having different characteristics can be simultaneously formed by one phosphorus diffusion and drive-in. |
