| 摘要 |
PURPOSE:To enable to remarkably reduce defect density and to improve the capacitor withstand voltage by a method wherein a high-melting point metal silicide film is formed on the substrate and after a metal oxide film of such a metal as Ta, Hf, Ti, Nb, Zr or Al is formed on the high-melting point metal silicide film, a high-temperature treatment is performed in a dry or wet oxidizing atmosphere. CONSTITUTION:A high-melting point metal silicide film 2 is formed on an arbitrary substrate 1 and a TazO5 film 3 is coated on the high-melting point metal silicide film 2. After this, a heat treatment is performed in a dry oxidizing atmosphere. As a result, the weak spot on the interface between the high-melting point metal silicide film 2 and the TazO5 film 3 is restored. After this, an electrode 4 is formed on the TazO5 film 3 and defect density is made to remarkably reduce without making the capacity of the capacitor drop. Or, a heat treatment is performed in a wet oxidizing atmosphere, thereby forming a silicon oxide film on the interface between the high-melting point metal silicide film 2 and the TazO5 film 5. By this way, the capacitor withstand voltage is made to improve and the defect density is made to reduce. |
