| 摘要 |
PURPOSE:To improve the reproducibility of the titled semiconductor device by a method wherein, when a thin film single crystal is formed by fusing and recrystallizing an amorphous or polycrystalline thin film by performing an annealing using an energy beam, a composite film of a narrow-stripped high melting point metal, having the width narrower than that of a beam, and a polycrystalline Si are formed on the thin film before recrystallization, and nuclei which are turned to seeds are grown under said composite film. CONSTITUTION:An insulating film 6 such as SiO2 and the like, an amorphous or polycrystalline Si layer 7 which is going to be single-crystallized and an insulating film 8 such as SiO2 and the like are formed by lamination on an Si substrate 1, and a composite film 11 consisting of a polycrystalline Si film 9, which alleviates the thermal stress generating when an annealing is performed, and a high melting point metal 10 such as Mo, W and the like having large electron stopping power and high electron reflectivity, are provided on the insulating film 8. Then, the film 11 is patterned into narrow-stripped form. At this time, the width of the narrow strip is formed at 10-20mum or thereabout which is narrower than the diameter of the electron beam. Through these procedures, the temperature rise of the Si layer 7 when an annealing is performed using an electron beam is suppressed, and a nuclei generating position suitable for the growth of single crystal is generated. |
