| 摘要 |
PURPOSE:To reduce base resistance, and to improve frequency characteristics by directly extracting a base electrode from an active base region while forming a base contact opening section as using a polysilicon layer for extracting an emitter electrode as a mask. CONSTITUTION:A collector buried layer 2, an epitaxial layer 3, a P type layer 4 for cutting a channel and an oxide film 102 for isolation are shaped to a substrate 1, and an active base layer 62 is formed through ion implantation. Polysilicon films 601, 602 are applied onto upper surfaces, and an emitter layer 71 and a collector electrode extracting layer 81 are formed. Oxide films 108 are shaped only on the side walls of polysilicon films 601, 602, 603, nitride films 202 for passivation are applied, and contact holes 50, 70, 80 for a base, an emitter and a collector are formed through selective etching. |
