| 摘要 |
PURPOSE:To reduce junction leakage currents by displacing a burying oxide film from a junction surface between a P well and an N well and forming it. CONSTITUTION:A burying oxide film 10 is shaped on the N well 2 side from P-N junction surfaces formed by a P well 2 and both an N well 2 and an N type substrate 1. A fact that the current amplification factor of a lateral bipolar transistor is reduced and a feedback is difficult to be applied is adapted by limiting the diffusion of carriers in the lateral direction by the burying oxide film 10. An effect at a time when a groove for burying the oxide film 10 is shaped can further be inhibited, thus reducing junction leakage currents, then minimizing power consumption. |
