DIVIDING PROCESS OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To improve the flatness on the sides of divided parts by a method wherein scribing lines are drawn on the surface of compound semiconductor to be diced along the scribing lines. CONSTITUTION:Scribing lines 7 are drawn on the main surface of compound semiconductor 5 by means of a diamond scribing point 6. The scribing lines 7 shall be 0.5 or several mum thick. Successively the main surface is diced by means of a diamond cutter blade 8 utilizing the scribing lines 7 as guide lines. Since the thickness of blade 8 remarkably exceeds that of the scribing lines 7, the blade 8 may be forwarded so that the scribing lines 7 may skirt along one side of the blade 8 or two rows of scribing lines 9 are drawn so that the glade 8 may be forwarded between the two rows. The parts so far divided may be cut off by linear lines in plan to be flattened entirely in cross section.