| 摘要 |
PURPOSE:To enable to flatten films in an excellent reproducible manner when there is irregularity in thickness of an insulating film and a coated film by a method wherein an etching is performed on the coated film and a part of the insulating film, the emission spectrum of the compound contained in the insulating film or its compound is observed in a flattening process, and the terminal point of the etching is detected. CONSTITUTION:An etching is started, and the N2 molecular spectrum in a photoresist 4 appears in the regions A-B. Then, the strength of the N2 molecular spectrum is increased by the N2 generated from a silicon nitride film 3 in the regions B-C. The whole surface of a wafer consists of a silicon nitride film in the regions C-D, and the strength of the N2 molecular spectrum can be maintained at a fixed value. The strength of the N2 molecular spectrum is decreased after it passes the D-point. This is because the exposure of Al surface on the surface of the wafer and the percentage of occupation of a silicon nitride film on the surface of the wafer is reduced. Said D-point is considered as the terminal point of the etching. According to this method, the flattening of films can be accomplished in an excellent reproducible manner. |
