| 摘要 |
PURPOSE:To form with facility an element isolating groove equipped with but a little lateral expansion and yet with a desired depth by a method wherein a nitrogen-containing single-crystal layer is formed on an element forming region on a substrate and then an epitaxial layer is formed to cover the substrate. CONSTITUTION:At a location where an element isolating region is planned to be formed on a single-crystal silicon substrate 1, an oxide film 2 and a silicon nitride film 3 are formed. Next, epitaxial growth is accomplished on the substrate 1 for the formation of an epitaxial layer 4 of silicon whose surface in next covered by a protecting oxide film 6. A process follows wherein the silicon nitride film 3, oxide film 2, and polycrystalline silicon 5 positioned on the silicon nitride film 3 are removed. An element isolating groove G thus formed is filled for example with SiO2. |
