| 摘要 |
PURPOSE:To obtain a GaAs semiconductor device occupying a smaller area with simplified manufacturing processes, by forming an Mo layer extending over both a Schottky electrode and an active region so as to connect the gate of a load transistor to a source without using a wiring layer. CONSTITUTION:An E/D type DCFL system inverter 10 of GaAs semiconductor is composed of a driver B of E-type FET and of a load transistor A of D-type FET. An ohmic electrode 1 coupled to an active region 2 is formed by a technique similar to conventional ones. A Schottky electrode 3 of the load transistor A is formed of a heat-resistive Schottky metal, i.e. tantalum tungsten silicide while a part thereof is formed to have a two-layer structure consisting of a layer of that metal and a layer of molybdenum 6. The gate 3 of the load transistor is rendered ohmic in the region where the Mo layer 6 is present by the annealing heat treatment, and connected with a source C. According to this construction, no wiring layer is required for connecting the gate of the load transistor to the source, and therefore a minituarized device can be obtained while the manufacturing processes can be simplified. |
