| 摘要 |
PURPOSE:To facilitate the production of a fine IGFET, by disposing an inversion preventing layer of the same type with a substrate in the regions where the gate overlaps the ends of the source and the drain or in the region where the gate overlaps an end of the drain. CONSTITUTION:A silicon substrate 1 is provided with a drain 4, a source 5, a depletion layer 6, an inversion layer 7, inversion-preventing layers 8, a gate 2 and a gate oxide film 3, while the layers 8 are disposed in the regions where the gate 2 overlaps the ends of the source 5 and the drain 4. According to this construction, in which a conventional inversion layer is simply dislocated partially to below the inversion preventing layers, the ends of a channel of the IGFET is prevented from being contacted with the gate oxide film 3. Consequently, no high field is concentrated to the ends of the drain, fewer electrons or holes are trapped in the oxide film, and hot carriers are reduced. The reliability of the transistor can thus be improved. |
