发明名称 |
INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME |
摘要 |
An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate. |
申请公布号 |
HK45486(A) |
申请公布日期 |
1986.06.27 |
申请号 |
HK19860000454 |
申请日期 |
1986.06.19 |
申请人 |
HITACHI, LTD. |
发明人 |
ISAO YOSHIDA;TAKEAKI OKABE;MITSUO ITO;KAZUTOSHI ASHIKAWA;TETSUO IIJIMA |
分类号 |
H03F1/52;H01L27/02;H01L27/04;H01L27/06;H01L29/78;H02H7/20;H03F1/42;(IPC1-7):H01L29/78;H01L29/58 |
主分类号 |
H03F1/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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