| 摘要 |
PURPOSE:To enable the increase in integration by unnecessitating load resistors, by a method wherein many grooves making an angle of 0-90 deg. between a line combining opposite electrodes are formed in the surface of the second semiconductor layer formed on the first semiconductor layer, or by other methods. CONSTITUTION:Hetero junctions made of a first semiconductor layer 9 and a second semiconductor layers 12, 8 of the same conductivity type having large differences in electron affinity are formed. In the surface of the second semicon ductor layers, e.g. AlGaAs layers 12, 8 of small electron affinity formed on the first semiconductor layer, e.g. GaAs layer 9 of large electron affinity, many grooves making an angle of 0-90 deg. between a line combining opposite electrodes 2, 4 or 1, 3 are formed. The thicknesses of the second semiconductor layers 12, 8 are made large enough to gate-voltage-control the number of carriers 11 accumulated in the interface between the first semiconductor layer 9 at said groove parts, and input terminals 2, 4, output terminals 1, 3, and a gate input terminal 5 are provided. This construction enables the increase in integra tion by allowing switch action and voltage amplification without load resistors. |
