发明名称 ELECTROPHOTOGRAPHIC SENSITIVE BODY
摘要 PURPOSE:To assure the uniform spreading of a depletion layer after an electrostatic charge treatment and to obtain high surface potential receptive power without the concn. of electric fields by optimizing the amt. of the boron to be added to a photosensitive layer. CONSTITUTION:The multi-layered structure having an n-type or p-type electric charge implantation blocking layer 11, the photosensitive layer 12 added with boron and a surface protective layer 13 on the free surface thereof is formed to an amorphous silicon electrophotographic sensitive body contg. hydrogen. B/tX10<-4> is made in a 0.5-1.2 range when the amt. of the boron to be added to the photosensitive layer 12 is designated as Batm% with respect to silicon and the film thickness of the photosensitive layer 12 as tmum. The substantial image density is thus obtd. even with the thin photosensitive layer of <=15mum and the stable image quality is obtd. even after continuous copying of >=500,000 copies. The inexpensive a-Si electrophotographic sensitive body is thus formed.
申请公布号 JPS61160750(A) 申请公布日期 1986.07.21
申请号 JP19850001605 申请日期 1985.01.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANAKA EIICHIRO;TAKIMOTO AKIO
分类号 G03G5/08;G03G5/082;G03G5/14 主分类号 G03G5/08
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