| 摘要 |
PURPOSE:To simplify the manufacture process of a sensor and to obtain superior responsibility and high measurement precision by forming a semiconductor on an end surface of an optical fiber by vapor deposition or epitaxial growth. CONSTITUTION:A semiconductor film 22 and a reflecting mirror 23 are formed on the front end surface of the optical fiber 21 by vapor deposition or epitaxial growth, and a lens 24, a half-mirror 25, and a light emitting element 26 as a light source are arranged in order at the base end surface side on its prolonga tion. The optical fiber 21 is constituted by forming a clad layer around a core made of quartz and a precoat layer is formed at its outer periphery. The semi conductor film 22 uses GaAs, etc., and is formed directly on the front end sur face of the optical fiber 21 by vapor deposition or epitaxial growth to a 0.001-0.300mm, preferably, 0.01-0.10mm thickness. Consequently, a sensor which has high quality and excellent responsibility is obtained. |
