发明名称 |
APPARATUS INCLUDING IMPROVED CATHODE FOR CONTINUOUS DEPOSITION OF AMORPHOUS MATERIAL |
摘要 |
A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup reels advance a thin film substrate through the system. At least one chamber is located intermediate the feed and takeup reels wherein a plasma is generated by a glow discharge of a reaction gas mixture. Apparatus associated with the chamber provides close regulation of plasma/substrate surface equilibrium to assure that a uniform layer of amorphous material is deposited. A chamber cathode, including a top surface electrode is adapted to provide a substantially uniform distribution of reaction gas during deposition by means of a plurality of baffles that equalizes path lenghts from a reaction gas source to the electrode and from the electrode to a vacuum chamber. The electrode is electrically insulated from a plurality of gas exits to confine the plasma to the region between the electrode and the active surface of the substrate. Additional subsystems include a servo-controlled reel drive to regulate substrate tension and and an inert gas curtain to isolate the interior of the chamber. |
申请公布号 |
DE3272239(D1) |
申请公布日期 |
1986.09.04 |
申请号 |
DE19823272239 |
申请日期 |
1982.03.03 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
IZU, MASATSUGU;GATTUSO, DAVID A.;BARNARD, TIMOTHY J.;OVSHINSKY, HERBERT C. |
分类号 |
C23C16/509;C23C16/54;(IPC1-7):C23C14/34 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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