| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of manufacturing a conductive silicon carbide sintered body having a suppressed change in a specific resistance value due to oxidation and decreased temperature dependence of a specific resistance value.SOLUTION: In a manufacturing method of a conductive silicon carbide sintered body, in a sintered body including a conductive phase which is a phase of silicon carbide containing nitrogen as a dopant, a high resistance phase, which is a phase of silicon carbide having a nitrogen concentration lower than the average nitrogen concentration in the conductive phase, is formed at least outside the conductive phase, whereby a sintered body is produced which has a smaller change in a specific resistance value due to oxidation in comparison with a sintered body not having the high resistance phase, and a sintered body is produced which has temperature dependence of a specific resistance value differentiated by the content of β-type silicon carbide in the sintered body.SELECTED DRAWING: Figure 3 |
