| 摘要 |
PURPOSE:To increase reliability, by measuring the current amplification factor after heat treatment is done in an atmosphere including hydrogen, in the current amplification factor measurement before internal wiring is formed in the course of the manufacturing process. CONSTITUTION:In the manufacturing process for a bi-polar semiconductor device, a wafer which is finished in regard to window opening for contacts is heat-treated at a temperature of 400-500 deg.C in an atmosphere including hydrogen and nitrogen having a ratio of 1:1. Then the current amplification factor before forming the internal wiring is measured. The heat treatment in the hydrogen atmosphere makes the interface level inactive, so the measurement value of the current amplification factor hFE reflects the diffusion conditions positively. Accordingly, measured data which has definite correlation between it and a final measurement value, is attained, and a final hFE can be anticipated precisely from the value measured just after opening the contact windows, thus enabling to manage the process properly.
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