| 发明名称 |
SEMICONDUCTER ROM DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A read only memory contains a conductive layer of polysilicon which contacts the drains of memory cell MOS transistors and lies near and on a gate electrode. A data line made of aluminum and the drain of the MOS transistors are interconnected through the conductive layer. A method of manufacturing the ROM such structure is also disclosed. |
| 申请公布号 |
EP0124115(A3) |
申请公布日期 |
1986.10.08 |
| 申请号 |
EP19840104787 |
申请日期 |
1984.04.27 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ARIIZUMI, SHOJI C/O PATENT DEVISION;IWASE, TAIRA C/O PATENT DEVISION;MASUOKA, FUJIO C/O PATENT DEVISION |
| 分类号 |
G11C17/00;G11C17/08;H01L21/8246;H01L23/522;H01L27/112;H01L29/78;(IPC1-7):H01L27/10;H01L21/82 |
主分类号 |
G11C17/00 |
| 代理机构 |
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