| 摘要 |
PURPOSE:To improve the capability of controlling the threshold voltage, by forming the shallow N<+> layer in contact with the active layer under the gate electrode, installing the forming region of source-drain electrode close by the gate electrode and forming the deep N<+> layer only in the forming region. CONSTITUTION:The active layer region 2 is formed by injection of Si ion into the semi-insulative GaAs substrate 1. The gate electrode 3 is formed by sputtering of the TiW film. The N<+> layer region 5 of shallow junction depth is formed by injection of the SiO2 film 4. The N<+> layer region 7 of deep junction depth is formed by sputtering of Si ion. The ohmic metal 8 is deposited and the photoresist is coated on the whole surface by rotation. The source-drain electrode and the Ti-Pt-Au wiring 12 are formed.
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