| 发明名称 |
Method and Power Semiconductor Device Having an Insulating Region Arranged in an Edge Termination Region |
| 摘要 |
A power semiconductor device includes a semiconductor body having first and second opposing sides and an edge termination region arranged between an active region and an outer rim. The semiconductor body further includes a first doping region in the active region and connected to a first electrode arranged on the first side of the semiconductor body, a second doping region in the active region and the edge termination region and connected to a second electrode arranged on the second side of the semiconductor body, a drift region between the first doping region and the second doping region, the drift region comprising a first portion adjacent to the first side of the semiconductor body and a second portion arranged between the first portion and the second doping region, and an insulating region arranged in the edge termination region between the second doping region and the first portion of the drift region. |
| 申请公布号 |
US2016315150(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615199135 |
申请日期 |
2016.06.30 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Schulze Hans-Joachim;Hirler Franz;Mauder Anton |
| 分类号 |
H01L29/10;H01L29/78;H01L29/739;H01L21/324;H01L29/778;H01L29/74;H01L29/861;H01L21/306;H01L29/06;H01L29/808 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a semiconductor body having a first side, a second side opposite the first side and an outer rim, the semiconductor body comprising an active region and an edge termination region arranged between the active region and the outer rim, the semiconductor body further comprising:
a first doping region in the active region and connected to a first electrode arranged on the first side of the semiconductor body;a second doping region in the active region and the edge termination region and connected to a second electrode arranged on the second side of the semiconductor body;a drift region between the first doping region and the second doping region,the drift region comprising a first portion adjacent to the first side of the semiconductor body and a second portion arranged between the first portion and the second doping region; andan insulating region arranged in the edge termination region between the second doping region and the first portion of the drift region. |
| 地址 |
Villach AT |
