HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS

摘要

A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor can include at least first and second pairs of electrically conductive plates and first and second electrodes. The first and second pairs of plates can be connectable with respective first and second electric potentials. The first and second pairs of plates can extend along an inner surface of the opening, each of the plates being separated from at least one adjacent plate by a dielectric layer. The first and second electrodes can be exposed at the surface of the substrate and can be coupled to the respective first and second pairs of plates.

主权项

1. A capacitor structure, comprising:
a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces; first and second metal elements exposed at the first surface and extending into the through opening, a first capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening; third and fourth metal elements exposed at the second surface and extending into the through opening, a second capacitor dielectric layer separating and insulating the third and fourth metal elements from one another at least within the through opening; first, second, third and fourth electrodes connected to the respective first, second, third, and fourth metal elements, the first and third electrodes being connectable to respective first and second electric potentials; and an insulating dielectric layer separating and insulating the second and third metal elements from one another at least within the through opening, the insulating dielectric layer having an undulating shape.