| 发明名称 |
NI:NIGE:GE SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME |
| 摘要 |
Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride. |
| 申请公布号 |
US2016314990(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201415103593 |
申请日期 |
2014.12.16 |
| 申请人 |
ENTEGRIS, INC. ;ATMI TAIWAN CO., LTD. |
发明人 |
BILODEAU Steven;BARNES Jeffrey A.;COOPER Emanuel;WU Hsing-Chen;TU Sheng-Hung;PARSON Thomas;YANG Min-chieh |
| 分类号 |
H01L21/3213;H01L29/45;H01L21/3205;H01L29/26;H01L29/16 |
主分类号 |
H01L21/3213 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition comprising at least one non-oxidizing acid, at least one unreacted metal dissolution agent, at least one germanium passivation agent, and at least one solvent. |
| 地址 |
Billerica MA US |
