| 摘要 |
PURPOSE:To suppress the deterioration in amount of accumulation of electric charge, which is to become data, by specifying a part of the configuration of a switching MISFET by an insulating film, which is constituted by oxidizing a semiconductor substrate or a well region. CONSTITUTION:A field insulating film 2 is provided on the main surface part of a semiconductor substrate 1 so that a part of the configuration of a switching MISFET, especially the width of a gate, is specified. The field insulating film 2 is constituted by an insulating film, which is formed by oxidizing the semiconductor substrate 1. The film 2 is formed so that mainly semiconductor elements are electrically isolated. Memory cells in a DRAM are constituted so that a pair of patterns is repeated in the direction, along which a bit line is extended. Data storing capacity elements of the memory cells neighboring the switching MISFET are constituted in the direction, along which a word line is extended, so that repeating patterns are provided one another. Therefore, the field insulating film 2 specifies the width of the gate of the switching MISFET and also specifies the configuration of the data storing capacitor element of the neighboring memory cell. |
