| 摘要 |
<p>PURPOSE:To reduce a dark current of an element by eliminating a current flowing through a pinhole and to improve the yield of manufacturing the element by eliminating the improper characteristics of the element by forming a structure that a pinhole existing in a thin film semiconductor layer is filled with photoresist. CONSTITUTION:Electrodes 2-1, 2-2, a resistance film 3, and amorphous silicon films 4-6 are superposed sequentially from the lower layer on a glass substrate 1. Pinholes C which pass to the film 3 of the lower layer exist in the films 4-6 in this state. The surface of the element is then coated with a negative type photoresist 8 in the thickness of approx. 1mm. The photoresist 8 of liquid state is impregnated to the pinhole C to bury it. Then, a light E of wavelength 200-500(nm) is emitted from the back surface 9 of the substrate 1 to a range that the films 4-6 exist to expose the photoresist 8. Thus, only the photoresist which fills the pinhole C is exposed. This is then developed, post-treated to bury the pinhole C with the photoresist 8 to block the pinhole C.</p> |
