| 发明名称 | Invisible dummy features and method for forming the same | ||
| 摘要 | A plurality of first miniature elements of an overlay mark is formed in a first layer. A plurality of second miniature elements of the overlay mark is formed in a second layer different from the first layer. A plurality of dummy features is formed around the overlay mark. The dummy features are formed such that they each have a dimension below a resolution of an alignment detection tool configured to optically scan the overlay mark in an alignment process. | ||
| 申请公布号 | US9484310(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201514937954 | 申请日期 | 2015.11.11 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Huang Wei-Chieh |
| 分类号 | H01L21/44;H01L23/544;G03F7/20;H01L21/768 | 主分类号 | H01L21/44 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of fabricating a semiconductor device, comprising: forming a plurality of first miniature elements of an overlay mark in a first layer; forming a plurality of second miniature elements of the overlay mark in a second layer different from the first layer; and forming a plurality of dummy features around the overlay mark, the dummy features being formed such that they each have a dimension below a resolution of an alignment detection tool configured to optically scan the overlay mark in an alignment process. | ||
| 地址 | Hsin-Chu TW | ||