Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma

摘要

A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.

主权项

1. A substrate processing system, comprising:
a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing; a gas supply system configured to supply gas to the processing chamber; a coil arranged outside of the processing chamber adjacent to the dielectric window; a radio frequency (RF) source configured to supply RF signals to the coil to create RF plasma in the processing chamber; a gas plenum arranged between the coil and the dielectric window, wherein the gas plenum includes a body; and N flux attenuating portions arranged in a spaced pattern adjacent to the coil, wherein N is an integer greater than one, wherein at least one of
the N flux attenuating portions are attached to the body of the plenum, and the N flux attenuating portions extend outwardly from the body, anda ring portion is arranged around the coil, wherein the N flux attenuating portions are attached to the ring and the N flux attenuating portions extend inwardly from the ring portion.