Semiconductor device including catalyst layer and graphene layer thereon and method for manufacturing the same

摘要

According to one embodiment, a semiconductor device is disclosed. The device includes a foundation layer including first and second layers being different from each other in material, and the foundation layer including a surface on which a boundary of the first and second layers is presented, a catalyst layer on the surface of the foundation layer, and the catalyst layer including a protruding area. The device further includes a graphene layer being in contact with the protruding area.

主权项

1. A semiconductor device comprising:
a foundation layer including first and second layers being different from each other in material, the foundation layer including a surface on which a boundary of the first and second layers is presented; a catalyst layer on the surface of the foundation layer, the catalyst layer including a protruding area, and an edge portion of the protruding area or a part of the protruding area except the edge portion being disposed directly above the boundary of the first and second layers; and a graphene layer in contact with the protruding area.