Modeling and correcting short-range and long-range effects in E-beam lithography

摘要

Processes and apparatuses are described for modeling and correcting electron-beam (e-beam) proximity effects during e-beam lithography. An uncalibrated e-beam model, which includes a long-range component and a short-range component, can be calibrated based on one or more test layouts. During correction, a first resist intensity map can be computed based on the long-range component of the calibrated e-beam model and a mask layout. Next, a target pattern in the mask layout can be corrected by, iteratively: (1) computing a second resist intensity map based on the short-range component of the calibrated e-beam model and the target pattern; (2) obtaining a combined resist intensity map by combining the first resist intensity map and the second resist intensity map; and (3) adjusting the target pattern based on the combined resist intensity map and the design intent.

主权项

1. In an electronic design automation (EDA) software tool in a computer, a method for correcting a mask layout to compensate for electron-beam (e-beam) proximity effects during e-beam lithography, the method comprising:
receiving a calibrated e-beam model which includes a long-range component which models long-range electron effects and a short-range component which models short-range electron effects; receiving a mask layout to be corrected, wherein the mask layout is generated based on a design intent; the EDA software tool in the computer pre-computing a first resist intensity map based on the long-range component of the calibrated e-beam model and the mask layout; and the EDA software tool in the computer correcting a target pattern within the mask layout by, iteratively:
computing a second resist intensity map on the target pattern based on the short-range component of the calibrated e-beam model and the target pattern;obtaining a combined resist intensity map on the target pattern by combining the first resist intensity map and the second resist intensity map; andadjusting the target pattern based on the combined resist intensity map and the design intent.