| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-polar gallium nitride thin film having high crystallinity and smoothness on an inexpensive Si single crystal substrate.SOLUTION: A laminate includes a silicon single crystal layer, a metal sulfide layer, and a gallium nitride layer, wherein the metal sulfide layer is present between the silicon single crystal layer and the gallium nitride layer. The laminate has a surface roughness Ra of 10 nm or less. The main crystal orientation of the gallium nitride layer is a gallium nitride hexagonal crystal (11-20) surface, of which the half-width is 1° or less. The gallium nitride layer has a minimum oxygen content of 5×10atm/cmor less in a range of 0-50 nm from an interface close to the silicon single crystal layer. The metal sulfide layer contains manganese sulfide as the main component. A part or all of the gallium nitride layer is made by a sputter film deposition method.SELECTED DRAWING: Figure 1 |
