| 摘要 |
PURPOSE:To obtain a hard and tough film having high adhesive strength between a substrate and thin film by using a sputtering target having the construction in which >=2 kinds of materials having different refractive index values are disposed at a suitable area ratio and forming the thin film by a high-frequency sputtering method. CONSTITUTION:The thin film material consisting of 2 kinds of the different materials A and B is disposed as a sputtering target in a container C of a sputtering device. The compsn. of the thin film to be formed on the substrate S depends on the probability at which the respective materials are sputtered by ionizing gaseous Ar<+>, i.e., the area ratio at which the respective materials exposed to the ionizing gas occupy in the entire part of the target and sputtering rate (the molecular number of the materials released by the collision of one molecule of the ionizing gas). The thin film having the intermediate refractive index value of 2 kinds of the materials is formed by the high-frequency sputtering method using the dielectric thin film materials SiO2 (n=1.45), MgO (n=1.69), ZrO2 (n=2.0), Ta2O5 (n=2.2). |
