| 摘要 |
PURPOSE:To obtain the titled body having a low dark current and a low operating voltage by constituting the titled body from the 1st layer composed of one of 3 kinds of specific films or a combination thereof and the 2nd layer mainly composed of a germanium nitride provided on at least one of the interfaces of the 1st layer. CONSTITUTION:The titled body is prepared by forming the 1st layer of any one selected among the film mainly composed of the noncrystalline silicon contg. a hydrogen atom or a halogen atom, a film mainly composed of a noncrystalline silicon and germanium, and a film mainly composed of a noncrystalline germanium or the combination thereof, and the 2nd layer mainly composed of the germanium nitride provided on at least one of the interfaces of the 1st layer. For example, the 2nd layer of GeNx is prepared by using a polycrystalline of Ge as a target, and introducing 1-3mTorr an Ar gas and 2-6mTorr an N2 gas into an apparatus, and by impressing a high frequency electric power of 300-500W. The 3rd layer of a-Si:H is prepared by using a polycrystalline of Si as a target, and by introducing 1-10mTorr an Ar gas and 0.3-4 mTorr H2 gas into an apparatus, and by impressing a discharge electric power of 200-800W. Further a transparent electrode 4 composed of ITO is formed by a sputtering method. |
