| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer producing method for efficiently producing a wafer from an ingot.SOLUTION: A wafer producing method for producing a wafer from a hexagonal single crystal ingot comprises a reformed layer forming step for positioning the focal point of a laser beam of a wavelength having transmissivity to the hexagonal single crystal ingot at a depth equivalent to the thickness of the wafer to be produced from the surface, relatively moving the focus point and the hexagonal single crystal ingot to irradiate the surface with the laser beam, and forming a reformed layer parallel to the surface and a crack extending from the reformed layer. The reformed layer forming step irradiates the laser beam so that the focal point of the laser beam relatively moves from the inside of the ingot to the outer periphery.SELECTED DRAWING: Figure 9 |
