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发明名称
ION IMPLANTING APPARATUS FOR SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPS6276148(A)
申请公布日期
1987.04.08
申请号
JP19850214262
申请日期
1985.09.27
申请人
NEC KYUSHU LTD
发明人
TASHIRO NAOTO
分类号
H01L21/265;H01J37/317
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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