发明名称 Voltage level shifting depletion mode FET logical circuit
摘要 A GaAs D-MESFET logic system having a low power delay product has a switching second and a voltage level shifting section. The voltage level shifting section consists of a chain of diodes and a pulldown transistor. The switching section consists of an array of D-MESFETs which acts to speed up operation of a coupling capacitor. The low power dissipation of known capacitor coupled D-MESFET logic is thus preserved, while reducing gate delay.
申请公布号 US4663543(A) 申请公布日期 1987.05.05
申请号 US19850777643 申请日期 1985.09.19
申请人 NORTHERN TELECOM LIMITED 发明人 SITCH, JOHN E.
分类号 H03K19/017;H03K19/0952;(IPC1-7):H03K19/017 主分类号 H03K19/017
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