发明名称 |
Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam |
摘要 |
In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electrodes, both pairs being provided in the path of the electron beam. A deflection signal generated by modifying the amplitude of a high-frequency fundamental wave signal with a modulation wave signal having a frequency lower than that of the high-frequency fundamental wave signal is supplied to the deflection electrodes of the first pair. The electrodes rapidly deflect the electron beam in a first direction, while changing the range of deflecting the beam, thereby forming a locus of the beam spot on the sample. Simultaneously, the deflection electrodes of the second pair deflect the beam in a second direction, thereby annealing a region of the material, to form a single crystal semiconductor layer.
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申请公布号 |
US4662949(A) |
申请公布日期 |
1987.05.05 |
申请号 |
US19850762374 |
申请日期 |
1985.08.05 |
申请人 |
DIRECTOR-GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
INOUE, TOMOYASU;TANGO, HIROYUKI;SUGURO, KYOICHI;HIGASHINAKAGAWA, IWAO;HAMASAKI, TOSHIHIKO |
分类号 |
H01L21/20;H01L21/263;(IPC1-7):H01L21/263;H01L21/208 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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