METHOD OF PRODUCING SINGLE-CRYSTAL SILICON FILM

摘要

: A plurality of polycrystalline or amorphous silicon films and a plurality of insulator films are alternately stacked on a semiconductor substrate surface. The insulator films are substantially transparent to an irradiating energy beam and each has an opening therein. The plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiation with the energy beam. The resulting device has a relatively flat uppermost surface following the irradiation.