| 摘要 |
PURPOSE:To facilitate an easy fabrication of the light emitting semiconductor device and to improve the light emitting efficiency of the semiconductor device by coating chalcogenide glass through amorphous silicon film on a light emitting surface in semispherical shape. CONSTITUTION:An amorphous silicon film 9 is coated on the light emitting surface of a light emitting element by a sputtering or glowing means, and chalcogenide glass 10 such as As2S3 or the like is coated further thereon by a method of dropping in semispherical shape in the state of coating a light emitting semiconductor chip 1. The chalcogenide glass 10 has excellent improvement in emitting the light, and facilitates an easy fabrication of semispherical shape thereon. |
