| 摘要 |
PURPOSE:To remove the difficulty in selection of the material such as a heater, a heat-shielding board and the like as well as to prevent breakage of the state of ultra-high vacuum by a method wherein a structure with which reaction gas is heated up in a heating container is formed, gas circulating space is interconnected to a crystal growing chamber, and another exhaust system is provided in a heating chamber. CONSTITUTION:An ultra-high vacuum flange 1 is fixed to an ultra-high vacuum device, and the space C of the ultra-high vacuum device is brought into the state of ultra-high vacuum. A heating device D is evacuated to the state of high vacuum by operating a vacuum evacuating system 11. A wafer holder is set on a manipulator. Gas circulating space E is heated up by applying a current to a heater 4, and reactive gas is introduced into a heating container 5 from a gas control system 9. The reactive gas is brought into a large flow passage 20 from a small flow passage 21, reduced in flow velocity, and heated up, gas molecule goes up by obtaining kinetic energy, the gas jumps out to space C from an aperture 6 and flows toward a wafer.
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