| 摘要 |
<p>PURPOSE:To realize a memory characteristic which is the characteristic of a ferroelectric liquid crystal element with only the liquid crystal element by executing the orientation treatment to be subjected to two sheets of substrates by diagonal vapor deposition of SiO to be executed at 55-88 deg. angle with the normal of the substrates. CONSTITUTION:The diagonal vapor deposition is executed by setting the incident angle alpha of SiO at an optional angle between 55 and 88 deg. with the normal of the substrate 101. For example, electrodes 2 are formed on the substrates 1 and the oriented films 3 are formed to about 300Angstrom film thickness by 85 deg. diagonal vapor deposition of SiO. The space between two sheets of the substrates is about 2.0mum. A liquid crystal 4 is maintained at a specified spacer by using glass fibers, plastic beads, Al2O3 powder, films, resins, etc., as a spacer for the space between two sheets of the substrates. The ferroelectric liquid crystal is sealed into such element and the element is heated up to about 100 deg.C and is then slowly cooled, by which the uniform monodomain is obtd.</p> |
