发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICES |
摘要 |
<p>PRODUCTION OF SEMICONDUCTOR DEVICES A process is disclosed in which a layer of an organic material having a window is deposited onto the surface of an initial semiconductor structure. Layers are deposited on the exposed surface of the semiconductor, of which one layer is an ion-beam resisting material. Corresponding layers are deposited on the organic material. The organic material is then lifted off together with the layers deposited thereon. Ion-beam milling of the semiconductor material to either side of the layer of ion beam resisting material followed by removal of any remnant thereof results in a structure having an elevated semiconductor portion carrying an electrode. The invention can be applied to the production of rib waveguide electrooptic devices, including phase modulators.</p> |
申请公布号 |
CA1224887(A) |
申请公布日期 |
1987.07.28 |
申请号 |
CA19850482094 |
申请日期 |
1985.05.22 |
申请人 |
BRITISH TELECOMMUNICATIONS PLC |
发明人 |
HOUGHTON, ANDREW J.N. |
分类号 |
H01L21/302;G02F1/025;H01L21/027;H01L21/263;H01L21/28;H01L21/3065;H01S5/00;H01S5/042;(IPC1-7):H01L21/38 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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